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Abstract of the talk: "Semiconductor devices have become increasingly complex in recent years with aggressive scaling of device dimensions and introduction of new materials. This has led to the need for precise control of thickness and composition of a variety of metal, dielectric and semiconducting thin films that are used in device fabrication. At the same time, surface and interface physics play a critical role in determining device performance. As a result, XPS and UPS analyses of thin films, surfaces and interfaces have become indispensable in semiconductor process development. The Versaprobe II XPS-UPS system was installed at IIT Bombay’s Nanofabrication Facility in 2013. Since then it has been used extensively by academic and industry users all across India. This talk will present a brief introduction to the nanofab facility along with the capabilities and usage statistics of its XPS-UPS system. Examples of thin film XPS analysis for diverse semiconductor applications ranging from GaN RF HEMTs and advanced Ge CMOS to emerging 2D materials such as graphene and MoS2 will be discussed. Case studies of UPS, angle-resolved XPS and depth-profile XPS characterization that illuminate interface physics and its correlation with device performance will also be presented."